Anisotropy of the Magnetoresistance in Gd5Si2Ge2Physical Review Letters
AbstractThe observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the  and  directions exceed those parallel to the  direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the  direction and the anisotropy of electrical conductivity.
Copyright OwnerAmerican Physical Society
Citation InformationH. Tang, Vitalij K. Pecharsky, G. D. Samolyuk, Min Zou, et al.. "Anisotropy of the Magnetoresistance in Gd5Si2Ge2" Physical Review Letters Vol. 93 Iss. 23 (2004) p. 237203
Available at: http://works.bepress.com/d_l_schlagel/96/