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Article
Anisotropy of the Magnetoresistance in Gd5Si2Ge2
Physical Review Letters
  • H. Tang, Iowa State University
  • Vitalij K. Pecharsky, Iowa State University
  • G. D. Samolyuk, Iowa State University
  • Min Zou, Iowa State University
  • Karl A. Gschneidner, Jr., Iowa State University
  • Vladimir P. Antropov, Iowa State University
  • Deborah L. Schlagel, Iowa State University
  • Thomas A. Lograsso, Iowa State University
Document Type
Article
Publication Date
11-30-2004
DOI
10.1103/PhysRevLett.93.237203
Abstract

The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.

Comments

This article is from Physical Review Letters 93 (2004): 237203, doi:10.1103/PhysRevLett.93.237203.

Copyright Owner
American Physical Society
Language
en
Date Available
2013-09-20
File Format
application/pdf
Citation Information
H. Tang, Vitalij K. Pecharsky, G. D. Samolyuk, Min Zou, et al.. "Anisotropy of the Magnetoresistance in Gd5Si2Ge2" Physical Review Letters Vol. 93 Iss. 23 (2004) p. 237203
Available at: http://works.bepress.com/d_l_schlagel/96/