The complex dielectric functions of single crystals of Gd5Si2Ge2 were obtained using spectroscopic ellipsometry (SE) in the photon energy range of 1.5–5.0 eV at room temperature. Reflectance difference (RD) spectra for the a‐b and b‐c planes of single crystals of Gd5Si2Ge2 were derived from these dielectric functions and compared to those obtained from reflectance difference spectroscopy (RDS) at near-normal incidence. The two experimental RD spectra from SE and RDS agreed well. The in-plane optical anisotropy of the sample is mainly due to intrinsic bulk properties because of its larger magnitude (4×10−2) compared to surface-induced optical anisotropies, with a magnitude of only about 10−3 for a typical cubic material.
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