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Giant magnetostriction behavior at the Curie temperature of single crystal Gd5(Si0.5Ge0.5)4
Ames Laboratory Conference Papers, Posters, and Presentations
  • M. Han, Iowa State University
  • David C. Jiles, Iowa State University
  • J. E. Snyder, Iowa State University
  • Thomas A. Lograsso, Iowa State University
  • Deborah L. Schlagel, Iowa State University
Document Type
9th Joint MMM/Intermag Conference
Publication Date
(33.8352932, -117.91450359999999)

We report results of thermal expansion (TE) and magnetostriction (MS) measurements on a single crystal sample of Gd5(Si0.5Ge0.5)4 prepared by the Bridgman method. TE and MS were measured along the c axis by the strain gauge method and the temperature was controlled using a closed cycle helium refrigerator. From the TE measurements the magnetic structural phase transition temperature was found to be 259.5 K on cooling and 261.5 K on heating. The abrupt change in strain and the temperature hysteresis indicate that it is a first order transition. MS measurements were conducted at 15, 258, and 265 K. At 15 K, the magnetostriction amplitude was 3–4 ppm, whereas at 258 K it was 100 ppm. At 265 K, which is just above the Curie temperature, a giant magnetostriction of 2000 ppm was found. This unusual behavior is due to the fact that the external magnetic field can increase the transition temperature above 265 K, resulting in a first order magnetic/structural phase transition. The results reveal that giant magnetostriction inGd5(Si0.5Ge0.5)4 only occurs as a result of the magnetic/structural transformation.


Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics 95 (2004): 6945 and may be found at

Copyright Owner
American Institute of Physics
Citation Information
M. Han, David C. Jiles, J. E. Snyder, Thomas A. Lograsso, et al.. "Giant magnetostriction behavior at the Curie temperature of single crystal Gd5(Si0.5Ge0.5)4" Anaheim, CA(2004)
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