Article
An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor
IEEE Microwave and Wireless Components Letters
Abstract
An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18µm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
- Decoupling Capacitor,
- Electromagnetic Bandgap (EBG),
- On-Chip EBG Structure,
- Simultaneous Switching Noise (SSN)
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
8-1-2011
Publication Date
01 Aug 2011
Disciplines
Citation Information
Chulsoon Hwang, Yu Shim, Kyoungchoul Koo, Myunghoi Kim, et al.. "An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor" IEEE Microwave and Wireless Components Letters Vol. 21 Iss. 8 (2011) p. 439 - 441 ISSN: 1531-1309 Available at: http://works.bepress.com/chulsoon-hwang/22/