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An Analysis on the Effectiveness of 2 and 3 Terminal Capacitors in PDN Design
2023 IEEE Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMC+SIPI 2023
  • Jack Juang
  • Jiahuan Huang
  • Anfeng Huang
  • Kelvin Qiu
  • Hanfeng Wang
  • Yansheng Wang
  • Zhiping Yang
  • Chulsoon Hwang, Missouri University of Science and Technology
Abstract

The Parasitic Inductance of a Capacitor Depends on its Physical Structure. Due to the Geometry of 3-Terminal Capacitors, They Boast a Lower Parasitic Inductance Compared to 2-Terminal Capacitors of the Same and Possibly Smaller Package Sizes. While the Parasitic Inductance of a Single 3-Terminal Capacitor May Be Lower, using Multiple 2-Terminal Capacitors May Result in Similar Performance. in This Work, the Inductance of 2-Terminal (0201, Nominal 2.2 UF) and 3-Terminal (0402, Nominal 4.3 UF) Capacitors is Extracted and Compared through Measurements. from Our De-Embedding Method and Characterized Capacitors, the Inductance of 2-Terminal Capacitors is Only About 20 PH Higher Than the Characterized 3terminal Capacitor. on a Power Net of a Real Product, 3-Terminal Capacitors of the Same Type as Characterized Were Replaced with 2-Terminal Capacitors of the Same Type as Characterized. from Measurement Results, the Measured Inductance at 100 MHz is Lower by Only About 3.45 PH, or 2.62%, When using 3-Terminal Capacitors.

Department(s)
Electrical and Computer Engineering
Comments

National Science Foundation, Grant IIP-1916535

Keywords and Phrases
  • decoupling capacitors,
  • ESL,
  • inductance,
  • Power distribution network
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
1-1-2023
Publication Date
01 Jan 2023
Citation Information
Jack Juang, Jiahuan Huang, Anfeng Huang, Kelvin Qiu, et al.. "An Analysis on the Effectiveness of 2 and 3 Terminal Capacitors in PDN Design" 2023 IEEE Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMC+SIPI 2023 (2023) p. 264 - 269
Available at: http://works.bepress.com/chulsoon-hwang/140/