Due to the fast-switching nature of modern power converters, up to hundreds of MHz of common-mode noise can easily be generated. The characterization of switching components, e.g., Si MOSFETs, is essential for noise reduction. However, limited by the bandwidth of instruments, the voltage-dependent capacitances of high voltage MOSFETs are typically characterized at approximately 1 MHz, which is insufficient for EMI applications. In this paper, the measurement method and the test fixtures are presented. The measurement bandwidth is pushed to 30 MHz and higher, and frequency-dependent capacitances of a MOSFET are observed through measurements.