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Article
Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films
Journal of Micromechanics and Microengineering
  • Tarekul Alam, Pennsylvania State University - Main Campus
  • Mohan P. Manoharan, Pennsylvania State University - Main Campus
  • M. Amanul Haque, Pennsylvania State University - Main Campus
  • Christopher Muratore, University of Dayton
  • Andrey A. Voevodin, Air Force Research Laboratory
Document Type
Article
Publication Date
3-1-2012
Abstract
We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)−1 at zero strain to 0.34 W (m K)−1 at about 2.4% tensile strain. We propose that such strong strain–thermal conductivity coupling is due to strain effects on fraction–phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.
ISBN/ISSN
0960-1317
Comments

Permission documentation is on file.

Publisher
IOP Publishing
Peer Reviewed
Yes
Citation Information
Tarekul Alam, Mohan P. Manoharan, M. Amanul Haque, Christopher Muratore, et al.. "Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films" Journal of Micromechanics and Microengineering Vol. 22 Iss. 4 (2012)
Available at: http://works.bepress.com/christopher-muratore/54/