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Article
Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films
Journal of Applied Physics
  • Nicholas R. Glavin, Air Force Research Laboratory
  • Christopher Muratore, University of Dayton
  • Michael L. Jespersen, University of Dayton
  • Jianjun Hu, University of Dayton
  • Timothy S. Fisher, Purdue University
  • Andrey A. Voevodin, Air Force Research Laboratory
Document Type
Article
Publication Date
1-1-2015
Abstract
Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from aboron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2 +, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.
Inclusive pages
165305-1 to 165305-10
ISBN/ISSN
0021-8979
Document Version
Published Version
Comments

This document is provided for download in compliance with the publisher's policy on self-archiving. Permission documentation is on file.

Publisher
AIP Publishing
Peer Reviewed
Yes
Citation Information
Nicholas R. Glavin, Christopher Muratore, Michael L. Jespersen, Jianjun Hu, et al.. "Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films" Journal of Applied Physics Vol. 117 (2015)
Available at: http://works.bepress.com/christopher-muratore/34/