Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor DepositionApplied Physics Letters
AbstractUniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.
Inclusive pages261604-1 to 261604-5
Document VersionPublished Version
CopyrightCopyright © 2014, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Citation InformationChristopher Muratore, Jianjun Hu, Baoming Wang, M. Amanul Haque, et al.. "Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition" Applied Physics Letters Vol. 104 (2014)
Available at: http://works.bepress.com/christopher-muratore/19/