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Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition
Applied Physics Letters
  • Christopher Muratore, University of Dayton
  • Jianjun Hu, University of Dayton
  • Baoming Wang, Pennsylvania State University - Main Campus
  • M. Amanul Haque, Pennsylvania State University - Main Campus
  • John E. Bultman, University of Dayton
  • Michael L. Jespersen, University of Dayton
  • Michael E. McConney, Air Force Research Laboratory
  • R. D. Naguy, Air Force Research Laboratory
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Publication Date
Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.
Inclusive pages
261604-1 to 261604-5
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Published Version

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AIP Publishing
Peer Reviewed
Citation Information
Christopher Muratore, Jianjun Hu, Baoming Wang, M. Amanul Haque, et al.. "Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition" Applied Physics Letters Vol. 104 (2014)
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