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Ferroelectric Polymer Langmuir–Blodgett Films for Nonvolatile Memory Applications
Faculty Publications, Department of Physics and Astronomy
  • Stephen Ducharme, University of Nebraska-Lincoln
  • Timothy J. Reece, University of Nebraska-Lincoln
  • Christina M. Othon, University of Nebraska-Lincoln
  • R. K. Rannow, Hewlett-Packard Corporation, Corvallis, OR
Date of this Version
12-1-2005
Disciplines
Comments

Published in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 5, NO. 4, DECEMBER 2005. Copyright 2005 IEEE. Used by Permission.

Abstract

We review the potential for integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory (NV-FRAM or NV-FeRAM) and data-storage devices. The prototype material is a copolymer consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30). Recent work with LB films and more conventional solventformed films shows that the VDF copolymers are promising materials for nonvolatile memory applications. The prototype device is themetal–ferroelectric–insulator–semiconductor (MFIS) capacitance memory. Field-effect transistor (FET)-based devices are also discussed. The LB films afford devices with low-voltage operation, but there are two important technical hurdles that must be surmounted. First, an appropriate method must be found to control switching dynamics in the LB copolymer films. Second, the LB technology must be scaled up and incorporated into the semiconductor- manufacturing process, but since there is no precedent for mass production of LB films, it is difficult to project how long this will take.

Citation Information
Stephen Ducharme, Timothy J. Reece, Christina M. Othon and R. K. Rannow. "Ferroelectric Polymer Langmuir–Blodgett Films for Nonvolatile Memory Applications" (2005)
Available at: http://works.bepress.com/christina_othon/3/