Article
A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer
IEEE Transactions on Electron Devices
Abstract
We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
Department(s)
Electrical and Computer Engineering
Second Department
Chemical and Biochemical Engineering
Keywords and Phrases
- Si:H,
- Cl-Si:H,
- Amorphous Semiconductors,
- Double Amorphous Silicon Stacked Active Layer,
- Elemental Semiconductors,
- Leakage Currents,
- Off-State Photo-Leakage Current,
- Silicon,
- Thin Film Transistor,
- Thin Film Transistors
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1998 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
1-1-1998
Publication Date
01 Jan 1998
Disciplines
Citation Information
Jong Hyuni Choi, Chang-Soo Kim, Byung Cheon Lim and Jin Jang. "A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer" IEEE Transactions on Electron Devices (1998) ISSN: 0018-9383 Available at: http://works.bepress.com/chang-soo-kim/14/