Article
Measurement of Interface States Parameters of Si1-x-yGexCy/TiW Schottky Contacts using Schottky Capacitance Spectroscopy
Electrical and Computer Engineering
Document Type
Article
Publication Date
4-1-1999
Publisher
Elsevier B. V.
Disciplines
Abstract
The interface states parameters of density, distribution and capture cross-section for Si1−x−yGexCy/TiW Schottky contacts has been found from forward bias capacitance measurements using the Schottky capacitance spectroscopy (SCS) technique. It was found that the interface states parameters strongly depend on the composition and quality of the Si1−x−y GexCy alloy layer. `Negative capacitance' effects, observed for low measurement frequencies, limit the application of the Schottky diode model used to calculate the interface states parameters.
Citation Information
M. Zamora, G.K. Reeves, G. Gazecki, J. Mi, and C.Y. Yang, “Measurement of Interface States Parameters of Si1-x-yGexCy/TiW Schottky Contacts using Schottky Capacitance Spectroscopy,” Solid-State Electronics 43, 801-808 (1999).