Y‐Ba‐Cu‐O films were deposited on Al‐coated Si substrates by the plasma‐spray method. The Al buffer layer appears to be effective in yielding crack‐free adhesive Y‐Ba‐Cu‐O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x‐ray microanalysis and x‐ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.