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Article
Contact resistance in carbon nanostructure via interconnects
Electrical and Computer Engineering
  • Wen Wu
  • Shoba Krishnan
  • Toshishige Yamada, Santa Clara University
  • Xuhui Sun
  • Patrick Wilhite, Santa Clara University
  • Raymond Wu
  • Ke Li
  • Cary Y. Yang, Santa Clara University
Document Type
Article
Publication Date
4-20-2009
Publisher
American Institute of Physics Publishing
Abstract

We present an in-depth electrical characterization of contact resistance in carbon nanostructure via interconnects. Test structures designed and fabricated for via applications contain vertically aligned arrays of carbon nanofibers (CNFs) grown on a thin titanium film on silicon substrate and embedded in silicon dioxide. Current-voltage measurements are performed on single CNFs using atomic force microscope current-sensing technique. By analyzing the dependence of measured resistance on CNF diameter, we extract the CNF resistivity and the metal-CNF contact resistance.

Comments

Copyright © 2009 American Institute of Physics Publishing. Reprinted with permission.

Citation Information
W. Wu, S. Krishnan, T. Yamada, X. Sun, P. Wilhite, R. Wu, K. Li, and C.Y. Yang, “Contact resistance in carbon nanostructure via interconnects,” Applied Physics Letters 94, 163113 (3 pp) (2009). https://doi.org/10.1063/1.3123164