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Article
Structural Characterization of Rapid Thermally Oxidized Silicon-Germanium-Carbon Alloy Films
Electrical and Computer Engineering
  • W. K. Choi
  • L. K. Bera
  • J. H. Chen
  • W. Feng
  • K. L. Pey
  • Hans Yoong
  • J. Mi
  • Fan Zhang
  • Cary Y. Yang, Santa Clara University
Document Type
Article
Publication Date
6-1-2000
Publisher
Elsevier B. V.
Abstract

The properties of as-prepared and rapidly thermally oxidized Si1−x−yGexCy alloy films have been examined using infrared, X-ray diffraction, and Raman techniques. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content such that the oxidized film compositions resemble that of Si1−xGex films. For tensile films, two broad layers co-exist in the oxidized films, one with a carbon content higher and the other lower than that required for full strain compensation.

Citation Information
W.K. Choi, L.K. Bera, J.H. Chen, W. Feng, K.L. Pey, H. Yoong, J. Mi, F. Zhang, and C.Y. Yang, “Structural Characterization of Rapid Thermally Oxidized Silicon-Germanium-Carbon Alloy Films,” Materials Science and Engineering B75, 184-186 (2000).