Ion-beam-induced deposition (IBID) and electron-beam-induced deposition (EBID) with tungsten (W) are evaluated for engineering electrical contacts with carbon nanofibers (CNFs). While a different tungsten-containing precursor gas is utilized for each technique, the resulting tungsten deposits result in significant contact resistance reduction. The performance of CNF devices with W contacts is examined and conduction across these contacts is analyzed. IBID-W, while yielding lower contact resistance than EBID-W, can be problematic in the presence of on-chip semiconducting devices, whereas EBID-W provides substantial contact resistance reduction that can be further improved by current stressing. Significant differences between IBID-W and EBID-W are observed at the electrode contact interfaces using high-resolution transmission electron microscopy. These differences are consistent with the observed electrical behaviors of their respective test devices.
Article
Electron-beam and ion-beam-induced deposited tungsten contacts for carbon nanofiber interconnects
Electrical and Computer Engineering
Document Type
Article
Publication Date
8-22-2014
Publisher
IOP Publishing
Disciplines
Abstract
Citation Information
P. Wilhite, H.S. Uh, N. Kanzaki, P. Wang, A. Vyas, S. Maeda, T. Yamada, and C.Y. Yang, “Electron-beam and ion-beam-induced deposited tungsten contacts for carbon nanofiber interconnects,” Nanotechnology 25, 375702 (8 pp) (2014).