Article
Properties of Schottky Contacts of Aluminum on Strained Si1-x-yGexCy Layers
Electrical and Computer Engineering
Document Type
Article
Publication Date
12-9-1996
Publisher
American Institute of Physics Publishing
Disciplines
Abstract
Schottky contacts of Al/Si1-x-yGexCy were fabricated using conventional Si technology. Effects of thermal processing of the alloys on the electrical properties of the Al/Si1-x-yGexCy Schottky diodes were investigated. Current–voltage (I–V), capacitance–voltage (C–V), and x‐ray diffraction measurements were performed. These thick alloy films (100–150 nm) experienced strain relaxation upon annealing at 700 °C. Nearly ideal I–V and C–V behaviors were obtained for strain‐compensated samples. I–V and C–Vcharacteristics show evidence of dislocation‐related traps for strain‐relaxed samples. Carbon incorporation improves the I–V and C–V characteristics by lessening the extent of lattice relaxation due to thermal processing.
Citation Information
J. Mi, A. Gupta, C.Y. Yang, J. Zhu, P.K.L. Yu, P. Warren, and M. Dutoit, “Properties of Schottky Contacts of Aluminum on Strained Si1-x-yGexCy Layers,” Applied Physics Letters 69, 3743-3745 (1996). https://doi.org/10.1063/1.117208
Copyright © 1996 American Institute of Physics Publishing. Reprinted with permission.