Article
Simulation of InSb Devices Using Drift–Diffusion Equations
Solid-State Electronics
(2005)
Abstract
A methodology for simulation of InSb devices in commercial drift–diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage, room temperature InSb photodiodes.
Disciplines
Publication Date
August, 2005
DOI
10.1016/j.sse.2005.05.012
Citation Information
Edin Sijercic, K. Mueller and Branimir Pejcinovic. "Simulation of InSb Devices Using Drift–Diffusion Equations" Solid-State Electronics Vol. 49 Iss. 8 (2005) p. 1414 - 1421 Available at: http://works.bepress.com/branimir-pejcinovic/18/