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Article
Simulation of InSb Devices Using Drift–Diffusion Equations
Solid-State Electronics (2005)
  • Edin Sijercic, Portland State University
  • K. Mueller, Portland State University
  • Branimir Pejcinovic, Portland State University
Abstract
A methodology for simulation of InSb devices in commercial drift–diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage, room temperature InSb photodiodes.
Publication Date
August, 2005
DOI
10.1016/j.sse.2005.05.012
Citation Information
Edin Sijercic, K. Mueller and Branimir Pejcinovic. "Simulation of InSb Devices Using Drift–Diffusion Equations" Solid-State Electronics Vol. 49 Iss. 8 (2005) p. 1414 - 1421
Available at: http://works.bepress.com/branimir-pejcinovic/18/