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Article
MOS Translinear Principle for All Inversion Levels
2008
  • Bradley A. Minch , Franklin W. Olin College of Engineering
Document Type
Article
Publication Date
2-1-2008
Disciplines
Abstract

In this brief, we derive a translinear principle for alternating loops of saturated MOS transistors that is valid at all levels of inversion starting from a simplified version of the Enz-Krummanacher-Vittoz model of the MOS transistor. This generalized translinear principle reduces to the conventional one when all transistors in a translinear loop are biased in weak inversion and it reduces to the voltage-translinear principle when all transistors in the loop are biased in strong inversion. We show experimental measurements from an alternating loop of four nMOS transistors that was fabricated in a 0.5-mum CMOS process through MOSIS to corroborate the generalized translinear principle. Finally, we discuss some potential applications of the principle.

Comments

© 2008 IEEE. This article was published in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 55, iss. 2, pages 121 - 125 and may be found here.

Citation Information
Bradley A. Minch. "MOS Translinear Principle for All Inversion Levels" (2008)
Available at: http://works.bepress.com/bradley_minch/3/