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Article
Dilute Al–Mn alloys for superconductor device applications
Physics
  • S. T. Ruggiero
  • A. Williams
  • W. H. Rippard
  • A. M. Clark
  • S. W. Deiker
  • Betty A. Young, Santa Clara University
  • L. R. Vale
  • J. N. Ullom
Document Type
Conference Proceeding
Publication Date
3-11-2004
Publisher
Elsevier
Disciplines
Abstract

We discuss results on the superconducting and electron-transport properties of Mn-doped Al produced by sputter deposition. The critical temperature of Al has been systematically reduced to below 50 mK by doping with 1000–3000 ppm Mn. Values of the α parameter are in the range of 450–500, indicating sharp normal-to-superconductor transitions. This material is thus of significant interest for both transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor and superconductor/insulator/normal devices, in the latter case where appropriately doped Al–Mn replaces the normal metal.

Comments
LTD-10, 10th International Workshop on Low Temperature Detectors, Genoa, Italy 7-11
Citation Information
Ruggiero, S. T., Williams, A., Rippard, W. H., Clark, A. M., Deiker, S. W., Young, B. A., Vale, L. R., & Ullom, J. N. (2004). Dilute Al–Mn alloys for superconductor device applications. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1), 274–276. https://doi.org/10.1016/j.nima.2003.11.236