Article
Charge-Carrier Collection in Superconducting Titanium Transition-Edge Sensors Deposited on High-Purity Silicon
Physics
Document Type
Conference Proceeding
Publication Date
8-1-1993
Publisher
Springer
Disciplines
Abstract
We have found that superconducting titanium transition-edge sensors (TES) deposited on high-purity, monocrystalline silicon operate in two distinct “modes”, distinguished by different intrinsic gains. This difference may be due to changes in efficiency for prompt collection of the energy carried by electrons and holes; variously augmenting the dominant phonon-derived signals. Charge-carrier collection may be modulated by a space-charge region (Schottky-barrier) adjacent to the superconductor. We propose a model for this effect.
Chapter of
Phonon Scattering in Condensed Matter VII
Part of
Springer Series in Solid-State Sciences
Editor
Michael Meissner Robert O. Pohl
Comments
Proceedings of the Seventh International Conference, Cornell University, Ithaca, New York, August 3–7, 1992
Citation Information
Dougherty, B. L., Cabrera, B., Lee, A. T., Penn, M. J., Pronko, J. G., & Young, B. A. (1993). Charge-Carrier Collection in Superconducting Titanium Transition-Edge Sensors Deposited on High-Purity Silicon. In M. Meissner & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII (pp. 484–485). Springer. https://doi.org/10.1007/978-3-642-84888-9_188