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Faculty Selected Works of Bernard Feldman
Article
Deep‐level photoluminescence spectroscopy of CdTe grown by molecular‐beam epitaxy
Journal of Applied Physics (1987)
  • Bernard Feldman, University of Missouri-St. Louis
  • He‐Xiang Han, University of Missouri–St. Louis
  • M. L. Wroge, McDonnell Douglas Research Laboratories
  • D. J. Leopold, McDonnell Douglas Research Laboratories
  • J. M. Ballingall, McDonnell Douglas Research Laboratories
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Abstract
We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular‐beam epitaxy at both high‐ and low‐substrate temperatures. This line is in excellent agreement with the E2 line observed by deep‐level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.
Disciplines
Publication Date
1987
DOI
10.1063/1.337898
Citation Information
Bernard Feldman, He‐Xiang Han, M. L. Wroge, D. J. Leopold, et al.. "Deep‐level photoluminescence spectroscopy of CdTe grown by molecular‐beam epitaxy" Journal of Applied Physics Vol. 61 Iss. 7 (1987) p. 2670
Available at: http://works.bepress.com/bernard-feldman/86/