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Photoluminescence of pulsed laser irradiated n‐ and p‐GaAs
Applied Physics Letters (1982)
  • Bernard J. Feldman, University of Missouri–St. Louis
  • Douglas H. Lowndes, Oak Ridge National Laboratory
We report a photoluminescence study of pulsed ruby laser irradiated crystalline and ion implanted GaAs, which supports the following conclusions: (1) pulsed laser irradiation of crystalline GaAs alters both the intensity and the spectrum of photoluminescence, corresponding to an increase in nonradiative recombination centers present in the material; (2) the variation of luminescent intensity with laser energy density is different for n‐ and p‐type materials; (3) no luminescence is detected in high dose ion implanted GaAs, either before or after laser annealing.
Publication Date
January 1, 1982
Citation Information
Bernard J. Feldman and Douglas H. Lowndes. "Photoluminescence of pulsed laser irradiated n‐ and p‐GaAs" Applied Physics Letters Vol. 40 Iss. 1 (1982) p. 59 - 61
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