Article
Photoluminescence of pulsed laser irradiated n‐ and p‐GaAs
Applied Physics Letters
(1982)
Abstract
We report a photoluminescence study of pulsed ruby laser irradiated crystalline and ion implanted GaAs, which supports the following conclusions: (1) pulsed laser irradiation of crystalline GaAs alters both the intensity and the spectrum of photoluminescence, corresponding to an increase in nonradiative recombination centers present in the material; (2) the variation of luminescent intensity with laser energy density is different for n‐ and p‐type materials; (3) no luminescence is detected in high dose ion implanted GaAs, either before or after laser annealing.
Disciplines
Publication Date
January 1, 1982
DOI
10.1063/1.92924
Citation Information
Bernard J. Feldman and Douglas H. Lowndes. "Photoluminescence of pulsed laser irradiated n‐ and p‐GaAs" Applied Physics Letters Vol. 40 Iss. 1 (1982) p. 59 - 61 Available at: http://works.bepress.com/bernard-feldman/73/