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Article
Photoluminescence in liquid phase epitaxially grown Hg0.3Cd0.7Te
Journal of Applied Physics (1984)
  • Bernard J. Feldman, University of Missouri–St. Louis
  • J. Bajaj, Rockwell International
  • S. H. Shin, Rockwell International
Abstract
The photoluminescence spectra of liquid phase epitaxially (LPE) grown Hg0.3Cd0.7Te and its CdTe substrate have been measured. The CdTe spectra consist of two band‐edge sets of lines, B and C, while the Hg0.3Cd0.7Te spectra consist of one set of lines, A. From the temperature dependence of both the integrated intensity and peak position, we determined that the A line is unrelated to the C line but is very possibly related to the B line. The B line in CdTe is due to recombination of electrons and holes bound to a neutral donor. This suggests that the same neutral donor may be present in both materials, whereas the impurity or defect responsible for the C line in CdTe is undetectable in LPE‐grown Hg0.3Cd0.7Te.
Publication Date
May 15, 1984
DOI
10.1063/1.332902
Citation Information
Bernard J. Feldman, J. Bajaj and S. H. Shin. "Photoluminescence in liquid phase epitaxially grown Hg0.3Cd0.7Te" Journal of Applied Physics Vol. 55 Iss. 10 (1984) p. 3873 - 3875
Available at: http://works.bepress.com/bernard-feldman/72/