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Article
Variation of the α3 electron density in electron - hole droplets at constant stress
Solid State Communications (1979)
  • Bernard J. Feldman, University of Missouri–St. Louis
  • R.S. Markiewicz, General Electric
Abstract
It has previously been shown that, in an electron-hole drop (EHD) produced in 〈11〉 -stressed Ge, a large population of electrons can be maintained in the strain-split-off (α3) electron valleys. The density and binding energy of these EHD are calculated on the assumption that the drops contain a single phase with a fixed ratio of α3 to α1 electrons. This ratio can be varied experimentally, and the observed densities as a function of α3 electron fraction are in good agreement with theory.
Publication Date
February 1, 1979
DOI
10.1016/0038-1098(79)91206-7
Citation Information
Bernard J. Feldman and R.S. Markiewicz. "Variation of the α3 electron density in electron - hole droplets at constant stress" Solid State Communications Vol. 29 Iss. 5 (1979) p. 411 - 413
Available at: http://works.bepress.com/bernard-feldman/68/