Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films☆Solid State Communications (1981)
We present luminescence spectra of amorphous silicon-hydrogen films that shift to longer wavelengths with increasing defect density. We propose that the defects increase the density of states in the gap, which decreases the “thermalization gap”, which in turn shifts the luminescence spectra to the red. We also suggest that the same mechanism is present in doped amorphous silicon films.
Publication DateJanuary 10, 1981
Citation InformationWei-Chung Chen and Bernard J. Feldman. "Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films☆" Solid State Communications Vol. 40 Iss. 3 (1981) p. 225 - 227
Available at: http://works.bepress.com/bernard-feldman/64/