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Article
Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films☆
Solid State Communications (1981)
  • Wei-Chung Chen, University of Missouri–St. Louis
  • Bernard J. Feldman, University of Missouri–St. Louis
Abstract
We present luminescence spectra of amorphous silicon-hydrogen films that shift to longer wavelengths with increasing defect density. We propose that the defects increase the density of states in the gap, which decreases the “thermalization gap”, which in turn shifts the luminescence spectra to the red. We also suggest that the same mechanism is present in doped amorphous silicon films.
Publication Date
January 10, 1981
DOI
10.1016/0038-1098(81)90745-6
Citation Information
Wei-Chung Chen and Bernard J. Feldman. "Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films☆" Solid State Communications Vol. 40 Iss. 3 (1981) p. 225 - 227
Available at: http://works.bepress.com/bernard-feldman/64/