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Faculty Selected Works of Bernard Feldman
Article
Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy
Applied Physics Letters (1985)
  • J. M. Ballingall
  • W. J. Takei, Westinghouse Electric
  • Bernard J. Feldman, University of Missouri–St. Louis
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Abstract
(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x‐ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.
Disciplines
Publication Date
September 15, 1985
DOI
10.1063/1.96084
Citation Information
J. M. Ballingall, W. J. Takei and Bernard J. Feldman. "Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy" Applied Physics Letters Vol. 47 Iss. 6 (1985) p. 599 - 601
Available at: http://works.bepress.com/bernard-feldman/61/