Deep-level photoluminescence spectroscopy of CdTe grown by molecular-beam epitaxyJournal of Applied Physics (1987)
We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular‐beam epitaxy at both high‐ and low‐substrate temperatures. This line is in excellent agreement with the E2 line observed by deep‐level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.
Publication DateJanuary 4, 1987
Citation InformationHe‐Xiang Han, Bernard J. Feldman, M. L. Wroge, D. J. Leopold, et al.. "Deep-level photoluminescence spectroscopy of CdTe grown by molecular-beam epitaxy" Journal of Applied Physics Vol. 61 Iss. 7 (1987) p. 2670 - 2671
Available at: http://works.bepress.com/bernard-feldman/59/