CdTe photoluminescence in HgTe‐CdTe superlatticesJournal of Applied Physics (1987)
We report photoluminescence in HgTe‐CdTe superlattices that originates in the CdTe layers. We see a near‐band‐gap line at 1.493 eV, which demonstrates that strain and Hg‐Cd substitutional diffusion are small in the CdTe layers. In addition, a deep‐level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
Publication DateAugust 15, 1987
Citation InformationBernard J. Feldman, M. L. Wroge and D. J. Leopold. "CdTe photoluminescence in HgTe‐CdTe superlattices" Journal of Applied Physics Vol. 62 Iss. 4 (1987) p. 1516 - 1518
Available at: http://works.bepress.com/bernard-feldman/58/