Article
CdTe photoluminescence in HgTe‐CdTe superlattices
Journal of Applied Physics
(1987)
Abstract
We report photoluminescence in HgTe‐CdTe superlattices that originates in the CdTe layers. We see a near‐band‐gap line at 1.493 eV, which demonstrates that strain and Hg‐Cd substitutional diffusion are small in the CdTe layers. In addition, a deep‐level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
Disciplines
Publication Date
August 15, 1987
DOI
10.1063/1.339614
Citation Information
Bernard J. Feldman, M. L. Wroge and D. J. Leopold. "CdTe photoluminescence in HgTe‐CdTe superlattices" Journal of Applied Physics Vol. 62 Iss. 4 (1987) p. 1516 - 1518 Available at: http://works.bepress.com/bernard-feldman/58/