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Article
Search for the nitrogen dangling bond in amorphous hydrogenated carbon nitride
Solid State Communications (1991)
  • Jeremy Viehland, University of Missouri–St. Louis
  • S. Lin, University of Missouri–St. Louis
  • Bernard J. Feldman, University of Missouri–St. Louis
  • Kimberly Kilgore, University of Missouri–St. Louis
  • M.T. Jones, University of Missouri–St. Louis
Abstract
Motivated by the recent observation of the nitrogen dangling bond in amorphous hydrogenated silicon nitride by electron spin resonance, we report our search for the nitrogen dangling bond in amorphous hydrogenated carbon nitride using electron spin resonance. We searched in films as grown, annealed, irradiated with ultraviolet radiation, and with varying nitrogen concentrations. We are led to the conclusion that the nitrogen dangling bond state in amorphous hydrogenated carbon nitride is always below the top of the valence band, always filled with two electrons, and consequently unobservable by electron spin resonce.
Publication Date
January 11, 1991
DOI
10.1016/0038-1098(91)90159-S
Citation Information
Jeremy Viehland, S. Lin, Bernard J. Feldman, Kimberly Kilgore, et al.. "Search for the nitrogen dangling bond in amorphous hydrogenated carbon nitride" Solid State Communications Vol. 80 Iss. 8 (1991) p. 597 - 599
Available at: http://works.bepress.com/bernard-feldman/42/