Infrared and optical absorption of hydrogenated boron nitride thin filmsSolid State Communications (1995)
By the careful analysis of the infrared absorption lines around 1400 cm−1 of various boron nitride thin films grown by chemical vapor deposition, we present evidence that this region contains three different lines. These three lines are due to three different boron-containing icosahedra, and we associate two different amorphous phases with these three lines. One of these lines at 1371 cm−1 is also present in large band gap amorphous hydrogenated boron, suggesting that our boron nitride thin films contain amorphous hydrogenated boron-like material. The other two lines at 1263 cm−1 and 1505 cm−1 are roughly correlated and we associate them with a low band gap amorphous boron nitride material. We can then understand that changing either the substrate temperature of the growing film or the ammonia to diborane ratios in the feedstock gives rise to differing amounts of these two amorphous phases. Finally, we associate the larger bandgap boron nitride thin films with larger amorphous hydrogenated boron concentrations.
Publication DateJanuary 10, 1995
Citation InformationShu-Han Lin and Bernard Feldman. "Infrared and optical absorption of hydrogenated boron nitride thin films" Solid State Communications Vol. 96 Iss. 1 (1995) p. 29 - 32
Available at: http://works.bepress.com/bernard-feldman/32/