Complex domain-wall dynamics in compressively strained Ga1−xMnxAs epilayersAxel Enders Publications
Date of this Version1-1-2008
AbstractThe domain-wall-induced reversal dynamics in compressively strained Ga1−xMnxAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of a uniaxial part in the in-plane magnetic anisotropy 90°± δ domain walls with considerably different dynamic behavior are observed. While the 90° + δ reversal is identified to be propagation dominated with a small number of domains, the case of 90°− δ reversal involves a larger number of nucleation centers. The domain-wall nucleation/propagation energies ε for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the 90° + δ mode.
Citation InformationLiza Herrera Diez, Reinhard K. Kremer, Axel Enders, Matthias Rössle, et al.. "Complex domain-wall dynamics in compressively strained Ga1−xMnxAs epilayers" (2008)
Available at: http://works.bepress.com/axel_enders/33/