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Complex domain-wall dynamics in compressively strained Ga1−xMnxAs epilayers
Axel Enders Publications
  • Liza Herrera Diez, Max-Planck-Institut für Festkörperforschung
  • Reinhard K. Kremer, Max-Planck-Institut für Festkörperforschung
  • Axel Enders, University of Nebraska-Lincoln
  • Matthias Rössle, Max-Planck-Institut für Festkörperforschung
  • Erhan Arac, Max-Planck-Institut für Festkörperforschung
  • Jan Honolka, Max-Planck-Institut für Festkörperforschung
  • Klaus Kern, Max-Planck-Institut für Festkörperforschung
  • Ernesto Placidi, Università di Roma “Tor Vergata
  • Fabrizio Arciprete, Università di Roma “Tor Vergata,” CNR-INFM
Date of this Version

Published in PHYSICAL REVIEW B 78, 155310 (2008); DOI: 10.1103/PhysRevB.78.155310 ©2008 The American Physical Society. Used by permission.

The domain-wall-induced reversal dynamics in compressively strained Ga1−xMnxAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of a uniaxial part in the in-plane magnetic anisotropy 90°± δ domain walls with considerably different dynamic behavior are observed. While the 90° + δ reversal is identified to be propagation dominated with a small number of domains, the case of 90°− δ reversal involves a larger number of nucleation centers. The domain-wall nucleation/propagation energies ε for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the 90° + δ mode.
Citation Information
Liza Herrera Diez, Reinhard K. Kremer, Axel Enders, Matthias Rössle, et al.. "Complex domain-wall dynamics in compressively strained Ga1−xMnxAs epilayers" (2008)
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