A simple technique to measure stress in ultrathin films during growthAxel Enders Publications
Date of this Version1-1-1995
AbstractWe demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi, formation on Si(l11) is presented.
Citation InformationD. Sander, Axel Enders and J. Kirschner. "A simple technique to measure stress in ultrathin films during growth" (1995)
Available at: http://works.bepress.com/axel_enders/22/