Skip to main content
Other
A simple technique to measure stress in ultrathin films during growth
Axel Enders Publications
  • D. Sander, Max-Plan&-Institut fur Mikrostrukturphysik, Weinberg 2, 06120-Halle, Germany
  • Axel Enders, University of Nebraska at Lincoln
  • J. Kirschner, Max-Plan&-Institut fur Mikrostrukturphysik, Weinberg 2, 06120-Halle, Germany
Date of this Version
1-1-1995
Disciplines
Comments

Published in Rev. Sci. Instrum. 66 (9), September 1995. Copyright 1995 American Institute of Physics. Used by permission.

Abstract
We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi, formation on Si(l11) is presented.
Citation Information
D. Sander, Axel Enders and J. Kirschner. "A simple technique to measure stress in ultrathin films during growth" (1995)
Available at: http://works.bepress.com/axel_enders/22/