Skip to main content
Article
Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides
Optik (2010)
Abstract

Successful demonstration of selective area doping of planar glass samples for monolithic integration of optically passive and active devices on a single chip is presented. Salt solution of erbium was delivered onto pre-sintered germano-silicate samples via a syringe. The samples were then consolidated to form dense glass layers containing regions doped with rare earth. Erbium tri-chloride solution, 0.1 M, was used during the solution doping phase, with the resulting erbium atomic percentage ranging from more than 0.1-0.4%, increasing linearly with the number of drips applied. © 2008 Elsevier GmbH. All rights reserved.

Keywords
  • Erbium-doped waveguide amplifier,
  • Flame hydrolysis deposition,
  • Optical passive device,
  • Pre-sintering process,
  • Solution doping,
  • Active devices,
  • Active waveguides,
  • Atomic percentage,
  • Dense glass,
  • Erbium doped waveguide amplifier,
  • Glass samples,
  • Monolithic integration,
  • Passive devices,
  • Rare-earth doping,
  • Salt solution,
  • Selective areas,
  • Single chips,
  • Tri-chloride,
  • Chlorine compounds,
  • Erbium,
  • Glass,
  • Hydrolysis,
  • Monolithic integrated circuits,
  • Optical sensors,
  • Silicates,
  • Sintering,
  • Strontium compounds,
  • Waveguides,
  • Doping (additives)
Publication Date
2010
Citation Information
"Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides" Optik Vol. 121 Iss. 8 (2010)
Available at: http://works.bepress.com/asmd_haseeb/64/