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Tunable band gaps in bilayer graphene-BN heterostructures
arXiv (2010)
  • Ashwin Ramasubramaniam, University of Massachusetts - Amherst
  • Doron Naveh
  • ELias Towe
We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.
Publication Date
November, 2010
Publisher Statement
This article was harvested from arXiv. arXiv:1011.2489v1 [cond-mat.mtrl-sci]
Citation Information
Ashwin Ramasubramaniam, Doron Naveh and ELias Towe. "Tunable band gaps in bilayer graphene-BN heterostructures" arXiv Vol. 1 (2010)
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