Tunable band gaps in bilayer graphene-BN heterostructuresarXiv (2010)
We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.
Publication DateNovember, 2010
Citation InformationAshwin Ramasubramaniam, Doron Naveh and ELias Towe. "Tunable band gaps in bilayer graphene-BN heterostructures" arXiv Vol. 1 (2010)
Available at: http://works.bepress.com/ashwin_ramasubramaniam/6/