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Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes
Electrical and Computer Engineering
Document Type
Conference Proceeding
Publication Date
3-16-2015
Publisher
IEEE
Disciplines
Abstract
We report the electrical characteristics of carbon nanotube (CNT) vias of diameters down to 30 nm for potential application as on-chip interconnects. A CNT packing or areal density of 1.2×1011 /cm2 inside a via has been obtained. The measured resistances of the CNT vias are used to project via resistances in sub-30 nm technology nodes.
Citation Information
Changjian Zhou, Vyas, A., Wang, P., Chan, M., & Yang, C. Y. (2014). Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, 1–2. https://doi.org/10.1109/EDSSC.2014.7061272
IEEE International Conference on Electron Devices and Solid-State Circuits
18-20 June 2014
Chengdu, China