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Article
Carbon Nanofiber Interconnect RF Characteristics Improvement with Deposited Tungsten Contacts
Electrical and Computer Engineering
  • Anshul A. Vyas, Santa Clara University
  • Francisco Madriz
  • Nobuhiko Kanzaki
  • Patrick Wilhite, Santa Clara University
  • Xuhui Sun
  • Toshishige Yamada, Santa Clara University
  • Cary Y. Yang, Santa Clara University
Document Type
Article
Publication Date
3-1-2014
Publisher
American Scientific Publishers
Abstract

Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for high-performance electronic devices and circuits due to their light weight and excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds special promise for applications as on-chip interconnects. Contact resistance at CNF-metal interface is a major factor in limiting the electrical performance of CNF interconnects at all frequencies. In this paper, it is demonstrated that the contact resistance can be minimized and the high-frequency characteristics much enhanced by depositing tungsten on CNF-metal electrode contacts.

Citation Information
A. Vyas, F. Madriz, N. Kanzaki, P. Wilhite, X. Sun, T. Yamada, and C.Y. Yang, “Carbon Nanofiber Interconnect RF Characteristics Improvement with Deposited Tungsten Contacts,” Journal of Nanoscience and Nanotechnology 14, 2683-2686 (2014).