Novel Slurry Solutions for Thick Cu CMPIEEE Workshop on Microelectronics and Electron Devices, 2005
Document TypeConference Proceeding
AbstractElectro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.
This document was originally published by IEEE in IEEE Workshop on Microelectronics and Electron Devices, 2005. Copyright restrictions may apply. DOI: 10.1109/WMED.2005.1431630
Citation InformationPeter A. Miranda, Jerome A. Imonigie, Aaron L. Erbe and Amy J. Moll. "Novel Slurry Solutions for Thick Cu CMP" IEEE Workshop on Microelectronics and Electron Devices, 2005 (2005)
Available at: http://works.bepress.com/amy_moll/4/