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Ultraviolet Lasing in High-Order Bands of Three-Dimensional ZnO Photonic Crystals
Applied Physics Letters
  • Michael Scharrer
  • Alexey Yamilov, Missouri University of Science and Technology
  • Xiaohua Wu
  • Hui Cao
  • Robert P. H. Chang
UV lasing in three-dimensional ZnO photonic crystals is demonstrated at room temperature. The photonic crystals are inverse opals with high refractive index contrast that simultaneously confine light and provide optical gain. Highly directional lasing with tunable wavelength is obtained by optical pumping. Comparison of the experimental results to the calculated band structure shows that lasing occurs in high-order bands with abnormally low group velocity. This demonstrates that the high-order band structure of three-dimensional photonic crystals can be used to effectively confine light and enhance emission. Our findings may also impact other applications of photonic crystal devices. ©2006 American Institute of Physics
National Science Foundation (U.S.)
Keywords and Phrases
  • II-VI Semiconductors,
  • Laser Tuning,
  • Photonic Band Gap,
  • Stimulated Emission,
  • Ultraviolet Sources,
  • Wide Band Gap Semiconductors,
  • Optical pumping,
  • Photonic crystals,
  • Refractive index,
  • Semiconductor lasers,
  • Zinc compounds
Document Type
Article - Journal
Document Version
Final Version
File Type
© 2006 American Institute of Physics (AIP), All rights reserved.
Publication Date
Citation Information
Michael Scharrer, Alexey Yamilov, Xiaohua Wu, Hui Cao, et al.. "Ultraviolet Lasing in High-Order Bands of Three-Dimensional ZnO Photonic Crystals" Applied Physics Letters (2006)
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