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Article
Ultraviolet Photonic Crystal Laser
Applied Physics Letters
  • Alexey Yamilov, Missouri University of Science and Technology
  • Hui Cao
  • Robert P. H. Chang
  • Xiaohua Wu
  • Xang Liu
  • Shuyou Li
  • Vinayak P. Dravid
Abstract

We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process. ©2004 American Institute of Physics

Department(s)
Physics
Keywords and Phrases
  • II-VI Semiconductors,
  • Photonic Band Gap,
  • Semiconductor Thin Films,
  • Sputter Etching,
  • Wide Band Gap Semiconductors
Library of Congress Subject Headings
Optical pumping
Photonic crystals
Semiconductor lasers
Zinc compounds
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 American Institute of Physics (AIP), All rights reserved.
Publication Date
1-1-2004
Disciplines
Citation Information
Alexey Yamilov, Hui Cao, Robert P. H. Chang, Xiaohua Wu, et al.. "Ultraviolet Photonic Crystal Laser" Applied Physics Letters (2004)
Available at: http://works.bepress.com/alexey-yamilov/21/