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Article
The Effect of Dielectric Friction on the Rate of Charge Separation in Type Ii Znse/Cds Semiconductor Nanorods
Applied Physics Letters
  • Alexander N. Tarnovsky, Bowling Green State University
  • Nishshanka N Hewa-Kasakarage
  • Patrick Z. El-Khoury
  • Nickolas Schmall
  • Maria Kirsanova
  • Alexander Nemchinov
  • Alexey Bezryadin
  • Mikhail Zamkov
Document Type
Article
Disciplines
Abstract

The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods has been investigated using picosecond transient absorption spectroscopy. The spatial separation of an excited electron-hole pair was estimated from the redshift in band edge absorption corresponding to the decrease in the exciton binding energy. The present study identifies a considerable effect of the solvent polarity on the rate of charge separation in semiconductor heterostructures, which should be taken into account when selecting nanorod caging media, such as solvents or polymer matrices. © 2009 American Institute of Physics.

Publication Date
1-1-2009
Publisher
American Institute of Physics
DOI
https://doi.org/10.1063/1.3114464
Citation Information
Alexander N. Tarnovsky, Nishshanka N Hewa-Kasakarage, Patrick Z. El-Khoury, Nickolas Schmall, et al.. "The Effect of Dielectric Friction on the Rate of Charge Separation in Type Ii Znse/Cds Semiconductor Nanorods" Applied Physics Letters (2009)
Available at: http://works.bepress.com/alexander_tarnovsky/4/