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Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism
Boise State Patents
Document Type
Patent
Issued Date
9-1-2009
Assignee
Boise State University
Abstract
An oxide semiconductor doped with a transition metal and exhibiting room-temperature ferromagnetism is disclosed. The transition metal-doped oxide semiconductor is preferably manufactured in powder form, and the transition metal is preferably evenly distributed throughout the oxide semiconductor. The preferred embodiments are iron-doped tin dioxide and cobalt-doped tin dioxide. Gases may be detected by passing them across a material and measuring the change in magnetic properties of the material; the preferred material is iron-doped tin dioxide.
Citation Information
Alex Punnoose. "Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism" (2009) Available at: http://works.bepress.com/alex_punnoose/59/
33 Claims, 35 Drawing Sheets