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Magnetoresistance Characteristics in Individual Fe3O4 Single Crystal Nanowire
Journal of Applied Physics
  • K. M. Reddy, Boise State University
  • Nitin P. Padture, Brown University
  • Alex Punnoose, Boise State University
  • Charles Hanna, Boise State University
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We report on the magnetoresistance (MR) and electron transport measurements observed on asingle crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturationmagnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5-300 K temperature range were performed by scanning gate voltage and varying appliedmagnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10−4 Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.
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© 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 117(17), 17E115, and may be found at: 10.1063/1.4914535.

Citation Information
K. M. Reddy, Nitin P. Padture, Alex Punnoose and Charles Hanna. "Magnetoresistance Characteristics in Individual Fe3O4 Single Crystal Nanowire" Journal of Applied Physics (2015)
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