Electrical transport in amorphous semiconducting AlMgB14 filmsApplied Physics Letters
AbstractThe electrical transport properties of semiconducting AlMgB14films deposited at room temperature and 573K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.
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Copyright OwnerAmerican Institute of Physics
Citation InformationY. Tian, G. Li, Joseph Shinar, N. L. Wang, et al.. "Electrical transport in amorphous semiconducting AlMgB14 films" Applied Physics Letters Vol. 85 Iss. 7 (2004) p. 1181 - 1183
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