"Enhanced Ionic Sensitivity in Solution‐Gated Graphene‐Hexagonal Boron Nitride Heterostructure Field‐Effect Transistors" by Nowzesh Hasan

Selected Works of Adarsh D. Radadia

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Enhanced Ionic Sensitivity in Solution‐Gated Graphene‐Hexagonal Boron Nitride Heterostructure Field‐Effect Transistors

Advanced materials and technologies (2018)

Nowzesh Hasan, Louisiana Tech University
Bo Hou, Louisiana Tech University
Arden L. Moore, Louisiana Tech University
Adarsh D. Radadia, Louisiana Tech University

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Disciplines

Inorganic Chemistry and
Materials Science and Engineering

Publication Date

August 1, 2018

DOI

10.1002/admt.201800133

Citation Information

Nowzesh Hasan, Bo Hou, Arden L. Moore and Adarsh D. Radadia. "Enhanced Ionic Sensitivity in Solution‐Gated Graphene‐Hexagonal Boron Nitride Heterostructure Field‐Effect Transistors" Advanced materials and technologies Vol. 3 Iss. 8 (2018) p. 1800133
Available at: http://works.bepress.com/adarsh-radadia/4/