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Article
Enhanced Ionic Sensitivity in Solution‐Gated Graphene‐Hexagonal Boron Nitride Heterostructure Field‐Effect Transistors
Advanced materials and technologies
(2018)
Disciplines
Publication Date
August 1, 2018
DOI
10.1002/admt.201800133
Citation Information
Nowzesh Hasan, Bo Hou, Arden L. Moore and Adarsh D. Radadia. "Enhanced Ionic Sensitivity in Solution‐Gated Graphene‐Hexagonal Boron Nitride Heterostructure Field‐Effect Transistors" Advanced materials and technologies Vol. 3 Iss. 8 (2018) p. 1800133 Available at: http://works.bepress.com/adarsh-radadia/4/