The chemistry of diamond film growth from chlorinated hydrocarbons has been investigated using a hot filament reactor coupled to an orifice sampling mass spectrometer. The relative concentrations of the species present near the growth surface have been determined as a function of filament temperature for dilute mixtures of CH4, CH3Cl, CH2Cl2 and CHCl3 in H2. Mass spectral analysis indicated that chlorinated hydrocarbons are sequentially dechlorinated in the presence of hydrogen at moderate reactor temperatures. A dark film was deposited on all surfaces of the reactor during studies of this dechlorination of CHCl3. Raman analysis indicated that these deposits are small particle polycrystalline graphite. Pretreatment of a Si 〈111〉 substrate under conditions that create the graphite deposit is seen to produce a significant nucleation enhancement of diamond when followed by growth at a higher temperature. Chemical mechanisms for some of these processes are proposed.